Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy
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منابع مشابه
Analysis of the Band-Structure in (Ga, Mn)As Epitaxial Layers by Optical Methods
The ternary III-V semiconductor (Ga, Mn)As has recently drawn a lot of attention as the model diluted ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga, Mn)As layers are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to inte...
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تاریخ انتشار 2013